Low power and stable rram device based on α-in2se3 nanosheet / γ-in2se3 nanoparticle homojunction embedded in or ganic polymer (pmma) for non volatile memory application

Abstract

The Von Neumann Architecture has become more of a problem whose severity increases with every newer generation of the central processing unit. To solve the issue, memristors and other novel electronic heterojunctions are expected to become the most promising candidate. Resistive switching random access memory (RRAM) device is one of those promising candidates for next generation non volatile memory due to its high stacking density, Low power consumption, high scalability, fast fabrication process and multistate behaviors. The resistive switching (RS) behavior has been observed in the wide range of binary/ multinary oxides or chalcogenides and some or-ganics in recent years. Here in, for the first time novel α-In2Se3 nanosheet/ γ-In2Se3 nanoparticle homojunction embedded in poly-methyl methacrylate (PMMA) is employed as an active layer of Resistive random access memory device (RRAM) for non volatile memory application. This homojunction is synthesized via simple solvothermal method and dispersed in PMMA solution with different weight concen-trations. Several characterizations such as Field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), UV-Visible spectroscopy (UV-Vis), High-resolution transmission elec-tron microscopy (HRTEM), Raman spectroscopy are performed for analysis and perfect study of the synthesized material. The composite sample is deposited on a FTO coated transparent glass substrate to form Al/ In2Se3@PMMA/ FTO device. I-V characterizations of the cell reveal a for-mation free, bipolar, non volatile and multilevel Resistive-switching (RS) properties for memory application. Variation of In2Se3 concentration is performed to get the best performing device. The best device shows a significantly large resistance ON/OFF ratio of 104, low operating voltage (<2V) and long retention time (more than 9000 s) at room temperature. After the analysis of ex-perimental data, the conduction mechanism for our In2Se3-PMMA based RRAM device is ex-plained by trap-assisted space-charge limited conduction (SCLC) for high resistive state (HRS) and ohmic conduction for low resistive sate (LRS). The proposed RS active material is a promising candidate for future artificial neural systems for mimicking the characteristics of human memory.