Parametric study of MOSFET

Abstract

Telecommunications, data processing, physics and electronics, take a very important place in the events of research of the various laboratories. In the field of the ultra-high frequencies, the field-effect transistor MOSFET caused many studies and research to exploit its interesting and promising characteristics as well as possible. The objective of this contribution is devoted to study the static properties I-V of MOSFET. The study enables us to calculate the drain current as function of bias in both linear and saturated modes; this effect is evaluated using a numerical simulation program, one could notice that the MOS transistor characteristics are very sensitive to the temperature. The load of inversion via the threshold voltage and the mobility of the carriers are the two principal impacted parameters, it was noted that the increase in the temperature induces a drop of the threshold voltage like that of mobility, and an immediate consequence of this reduction is the diminution in the drain current. One can thus conclude that the temperature influences the performances of the device; more it is low, better is the reliability of the device under operation. It is well known that the device performance and characteristics are influence by change in operating temperature. Proper description of temperature effects in a device is essential for a circuit level MOSFET model to predict circuit behaviour over a wide range of temperature. To perform high temperature application, proper understanding of temperature reliant on parameter in MOSFET is critical. In a MOSFET model, there are many temperature dependent parameters such as bandgap, carrier mobility, threshold voltage, subthreshold leakage current, drain to source ON resistance, contact region resistance, saturation velocity etc. All of this parameters need to be modelled correctly. This paper deals with analysis of temperature effect on some of the MOSFET parameters like bandgap, carrier mobility, saturation velocity and contact region resistance. The analysis of all the effect are done by using mathematical simulation. The overall impact of these parameters on the characteristics of the MOSFET have been analysed.