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Please use this identifier to cite or link to this item: http://20.198.91.3:8080/jspui/handle/123456789/7753
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dc.contributor.advisorMondal, Chandrima-
dc.contributor.authorDasgupta, Sumedha-
dc.date.accessioned2025-04-17T05:55:55Z-
dc.date.available2025-04-17T05:55:55Z-
dc.date.issued2023-
dc.date.submitted2024-
dc.identifier.otherTC3978-
dc.identifier.urihttp://20.198.91.3:8080/jspui/handle/123456789/7753-
dc.descriptionAwarded year: 2024en_US
dc.format.extentxvii, 162 p.en_US
dc.language.isoenen_US
dc.publisherJadavpur University, Kolkata, West Bengalen_US
dc.subjectRaised Source/Drain architectureen_US
dc.subjectQuantum well MOSFETen_US
dc.subjectGroove angleen_US
dc.subjectHarmonic Distortionen_US
dc.subjectSingle event transienten_US
dc.titleNanoscale III-V compound semiconductor field effect transistors for high performance analog and logic applicationsen_US
dc.typeTexten_US
dc.departmentJadavpur university. Department of Electronics & Telecommunication Engineeringen_US
Appears in Collections:2024 (Awarded Year)

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Ph D Thesis (ETCE) Sumedha Dasgupta.pdf3.21 MBAdobe PDFView/Open
Abstract Sumedha Dasgupta.pdf85.57 kBAdobe PDFView/Open


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