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Please use this identifier to cite or link to this item: http://20.198.91.3:8080/jspui/handle/123456789/6563
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DC FieldValueLanguage
dc.contributor.advisorMondal, Chandrima-
dc.contributor.authorDas, Sandeepa-
dc.date.accessioned2025-01-06T10:08:07Z-
dc.date.available2025-01-06T10:08:07Z-
dc.date.issued2019-
dc.date.submitted2019-
dc.identifier.otherDC4606-
dc.identifier.urihttp://20.198.91.3:8080/jspui/handle/123456789/6563-
dc.format.extentix, 28p.en_US
dc.language.isoenen_US
dc.publisherJadavpur University, Kolkata, West Bengalen_US
dc.subjectHEMTen_US
dc.subjectMicroelectronicsen_US
dc.titleStudy of normally off High Electron MobilityTransistors (HEMT)en_US
dc.typeTexten_US
dc.departmentJadavpur University, Department of Electronics & Telecommunication Engineeringen_US
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