Analytical modeling of negative capacitance MOSFETs: effects of channel doping and ferroelectric layer thickness with derivation of landau coefficients

Abstract

In this paper, we consider a surface-potential based 1D analytical model for a long-channel negative capacitance (NC) silicon-based Metal Oxide Semiconductor (MOS) transistor. We firstly derive the expressions for the Landau coefficients i.e α and β for the ferroelectric material utilized and further proceed to calculate the threshold voltage (VT) and subthreshold swing (SS) exploiting the potential balance equation. We finally observe the characteristics of V th and SS with variation in channel doping concentration (Na) and ferroelectric layer thickness (tFE). We additionally report a study to highlight the non-scalability of ferroelectric parameters with tFE by consulting some experimental results.